KINHENG CRYSTAL MATERIAL(SHANGHAI) CO., LTD
Technology, Innovation, Value
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Major capability parameter
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single crystal
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Doped
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conduction type
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concentration of flows cm-3
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Density
cm-2
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Growth method
Max size
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Substrate
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GaAs
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None
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Si
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/
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<5×105
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LEC
HB
Dia3″
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Dia3″×0.5
Dia2″×0.5
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Si
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N
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>5×1017
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Cr
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Si
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/
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Fe
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N
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~2×1018
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Zn
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P
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>5×1017
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Size(mm)
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25×25×0.5mm,10×10×0.5mm,10×5×0.5mm,5×5×0.5mm
Special size and orientation are available upon request
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Surface rough
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Surface roughness(Ra):<=5A
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Polishing
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Single or double
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Pack
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100 clean bag,1000 exactly clean bag
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