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KINHENG CRYSTAL MATERIAL(SHANGHAI) CO., LTD

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Single Crystal Substrate

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Scintillation crystal

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Single Crystal Substrate

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KINHENG CRYSTAL MATERIAL(SHANGHAI) CO., LTD
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City:Shanghai
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 Single Crystal Substrate
China GaP single crystal substrate for sale

GaP single crystal substrate

Major capability parameter single crystal Doped conduction type concentration of flows cm-3 Density cm-2 Growth method Max size Substrate GaP S ...
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China Lithium Niobium(LiNbO3) for sale

Lithium Niobium(LiNbO3)

Major capability parameter Growth method Czochralski method Crystal structure M3 Unit cell constant a=b=5.148Å c=13.863 Å Melt point(℃) 1250 Density(g...
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China DKDP for sale

DKDP

Transparency range, nm 160-2800 nm Lengh tolerance, mm +0/-0.1 Aperture tolerances, mm +0/-0.1 Orientation accuracy of cut angle < 30 arcmin Surface ....
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China TeO2 single crystal substrate for sale

TeO2 single crystal substrate

Major capability parameter density(g/cm3) 6 Melt point (℃) 733 hardness (Mohs) 4 color clarity/colorless Clarity wave(mm) 0.33-5.0 Light transmittance...
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China LiTaO3 single crystal substrate for sale

LiTaO3 single crystal substrate

Major capability parameter Material purity >99.995% Crystal structure M6 Unit cell constant a=5.154Å c=13.783 Å Melt point(℃) 1650 Density 7.45(g/cm3) ...
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China GaAS single crystal substrate for sale

GaAS single crystal substrate

Major capability parameter single crystal Doped conduction type concentration of flows cm-3 Density cm-2 Growth method Max size Substrate GaAs None Si ...
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China ZnO single crystal substrate for sale

ZnO single crystal substrate

Major capability parameter Crystal structure M6 Unit cell constant a=3.252Å c=5.313 Å Density 5.7(g/cm3) Hardness 4(mohs) Melt point 1975℃ Thermal ......
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China SiC for sale

SiC

Major capability parameter Growth method MOCVD Crystal Structure M6 Unit cell constant a=3.08 Å c=15.08 Å Sequence ABCACB Direction <0001> 3.5 º With ...
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China Ge single crystal substrate for sale

Ge single crystal substrate

Major capability parameter Growth method Czochralski method Crystal structure M3 Unit cell constant a=5.65754 Å Density 5.323g/cm3 Melt point 937.4℃ ....
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China GaP single crystal substrate for sale

GaP single crystal substrate

Major capability parameter single crystal Doped conduction type concentration of flows cm-3 Density cm-2 Growth method Max size Substrate GaP S ...
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