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Major capability parameter
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Growth method
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Czochralski method
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Crystal structure
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M3
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Unit cell constant
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a=5.65754 Å
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Density
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5.323g/cm3
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Melt point
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937.4℃
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Doped material
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No doped
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Sb-doped
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In / Ga –doped
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Type
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/
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N
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P
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Resistivity
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>35Ωcm
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0.05Ωcm
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0.05~0.1Ωcm
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EPD
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<4×103∕cm2
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<4×103∕cm2
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<4×103∕cm2
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Size
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10x3,10x5,10x10,15x15,,20x15,20x20,
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dia2” x 0.33mm dia2” x 0.43mm 15 x 15 mm
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Thickness
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0.5mm,1.0mm
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Polishing
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Single or double
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Crystal orientation
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<100>,<110>,<111>,±0.5º
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Ra:
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≤5Å(5µm×5µm)
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Pack
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100 clean bag,1000 exactly clean bag
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